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HomeHome & OfficeLarge Appliances & Home ImprovementWelding & SolderingSoldering & Brazing EquipmentSolder & FluxSolderMB85RC256V Memory 32KB I2C Non Volatile FRAM Breakout Board
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₦ 7,090
₦ 13,48047%
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Description::
FRAM is non-volatile and can easily be read/written 10 trillion times.
It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer.
It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source.
The FRAM chip used provides 8 KB of memory, and USES a clock up to 20 MHz.
Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature.
Specifications:
Condition: 100% brand new
Addr: 1010+A2+A1+A0
Default: 0 x 50
VCC/Logic: 2.7-5.5V
Package list:
1 x FRAM Breakout Board
Description::
FRAM is non-volatile and can easily be read/written 10 trillion times.
It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer.
It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source.
The FRAM chip used provides 8 KB of memory, and USES a clock up to 20 MHz.
Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature.
Specifications:
Condition: 100% brand new
Addr: 1010+A2+A1+A0
Default: 0 x 50
VCC/Logic: 2.7-5.5V
Package list:
1 x FRAM Breakout Board
FRAM is non-volatile and can easily be read/written 10 trillion times.
It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer.
It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source.
The FRAM chip used provides 8 KB of memory, and USES a clock up to 20 MHz.
Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature.
Specifications:
Condition: 100% brand new
Addr: 1010+A2+A1+A0
Default: 0 x 50
VCC/Logic: 2.7-5.5V
Package list:
1 x FRAM Breakout Board
Description::
FRAM is non-volatile and can easily be read/written 10 trillion times.
It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer.
It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source.
The FRAM chip used provides 8 KB of memory, and USES a clock up to 20 MHz.
Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature.
Specifications:
Condition: 100% brand new
Addr: 1010+A2+A1+A0
Default: 0 x 50
VCC/Logic: 2.7-5.5V
Package list:
1 x FRAM Breakout Board
Specifications
Key Features
- FRAM is non-volatile and can easily be read/written 10 trillion times.
- It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer.
- It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source.
- The FRAM chip used provides 8 KB of memory, and USES a clock up to 20 MHz.
- Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature.
What’s in the box
1 x FRAM Breakout Board
Specifications
- SKU: GE779IP7AF20GNAFAMZ
- Model: N/A
- Size (L x W x H cm): 7x5x1
- Weight (kg): 0.006
- Color: N/A
- Main Material: Electronic Component
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MB85RC256V Memory 32KB I2C Non Volatile FRAM Breakout Board
₦ 7,090
₦ 13,48047%
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